P and n type semiconductor pdf

They form a crystal lattice by having each atom share all of its 4 valence electrons with neighbouring atoms. The extrinsic ptype semiconductor is formed when a trivalent impurity is added to a pure semiconductor in a small amount, and as a result, a large number of holes are created in it. Difference between p type and n type semiconductor circuit globe. If a silicon or germanium atom in its pure form is doped with an element of group. Although currents may be induced in pure, or intrinsic, semiconductor crystal due to the. Semiconductor type intrinsic extrinsic ptype ntype. Type or ptype semiconductor depending on the type of dopant. Thus, accommodating more electrons at the lower energy levels. Depending on the type of doping material used, extrinsic semiconductors can be subdivided into two classes.

Semiconductors types, examples, properties, application. Ptype, ntype semiconductors engineering libretexts. In a ptype semiconductor, there is an increase in the density of unfilled states. Neither pure siliconsi nor germaniumge are great conductors. The resultant material is known as an ntype semiconductor. Comprehend an ntype and a ptype extrinsic semiconductor. In most cases, the doping of a semiconductor leads either to the creation of donor or acceptor levels ntype ptype semiconductors.

However, in an ntype semiconductor, the density of states increases, therefore, accommodating more electrons at higher energy levels. In the p type semiconductor, the acceptor energy level is close to the valence band and away from the conduction band. Pdf physics of semiconductor devices manish srivastava. They form a crystal lattice by having each atom share all of its 4. Difference between n type and p type semiconductor quick.

The total of eight electrons can not easily be jiggled out of place by an incoming current. Silicon is an important semiconductor for which n 1. For a semiconductor, it lies between the values for a good conductor and an insulator and is a function of the temperature. A p n junction is a boundary or interface between two types of semiconductor materials, p type and n type, inside a single crystal of semiconductor. Difference between p type and n type semiconductor. In a ptype semiconductor, the iii group element of the periodic table is added as a doping element, whereas in ntype the v group element is the doping element. As an example, when trivalent impurities like al, ga etc. Based on the type of doping material incorporated, semiconductor crystals are classified into two types particularly n type semiconductors and p type semiconductors. That is, n p n i where n i is the intrinsic carrier density. Pure tetravalent substance is known as intrinsic semiconductoe and some impurity is mixed with that pure substance, it. The fermi level of the n type semiconductor lies between donor energy level and the conduction band while the fermi level of the p type semiconductor lies between the acceptor energy level and the valence band.

For an insulator at ordinary temperatures, nis much smaller and has a typical value n 107 per m3. Ntype semiconductors are a type of extrinsic semiconductor where the dopant. Although the free electrons and holes drift in opposite directions, the current. An intrinsic semiconductor is an undoped material with an. A large number of holes are provided in the semiconductor material by the addition of trivalent impurities like gallium and indium. The p positive side contains an excess of holes, while the n negative side contains an excess of electrons in the outer shells of the electrically neutral atoms there. The main difference between these ptype and ntype semiconductor is in terms of added impurities. The difference between p type and n type semiconductor are based on various factors like nature of doping element, majority and minority carriers etc. For an intrinsic semiconductor, the number of electrons per unit volume in the conduction band is equal to the number of holes per unit volume in the valence band. This allows electrical current to pass through the junction only in. Since n n c expe ce fkt and p n v expe fe vkt, where n is the electron density and p is the hole.